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Nagoya full virtual conference

The 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) will be held between the 30th of May and the 3rd of June 2021 as a FULL VIRTUAL CONFERENCE.
ISPSD includes technical discussions in power semiconductor devices and integrated circuits, their hybrid technologies, and applications.

Hitachi Energy contributions

Date / Time (CET)

Stream

Paper

Author/s

Wednesday 02/06/2021
05:35-06:00

Sesion 6: SiC Device Ruggedness & Reliability

Threshold Voltage Stability Study of 1.2kV High-K SiC Power MOSFETS Under Harsh Repetitive Switching Conditions

Stephan Wirths, Andrei Mihaila, Nick Schneider, Gianpaolo Romano, Yulieth Arango, Lars Knoll

Hitachi Energy, Switzerland

From 31/05/2021 – 03/06/2021
03:00~08:50

Poster Sessions - SiC Devices & Technology

Temperature Dependent Transient Threshold Voltage Hysteresis in SiC Power MOSFETs and Implications for Short Circuit Events

Elena Mengotti1, Enea Bianda1, David Baumann1, Renos Papamichalis1, Andrei Mihaila2, Stephan Wirths2

1) ABB Switzerland Ltd.; 2) Hitachi Energy Ltd., Switzerland

From 31/05/2021 – 03/06/2021
03:00~08:50

Poster Sessions - SiC Devices & Technology

Surge Current Capability Evaluation of 6.5kV SiC MOSFETs with 3D Cell Layouts

Kaloyan Naydenov2, Nazareno Donato2, Florin Udrea2, Andrei Mihaila1, Gianpaolo Romano1, Stephan Wirths1, Lars Knoll1

1) Hitachi Energy Ltd., Switzerland; 2) University of Cambridge, United Kingdom

From 31/05/2021 – 03/06/2021
03:00~08:50

Poster Sessions - SiC Devices & Technology

Rugged Dynamic Behaviour of 3.3kV SiC Power MOSFETs with High-K Gate Dielectric

Gianpaolo Romano, Stephan Wirths, Andrei Mihaila, Yulieth Arango, Antoni Ruiz, Lars Knoll

Hitachi Energy, CH