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Internship in Reliability Testing for SiC-based Power Semiconductors 80 - 100% (f/m/d)

The opportunity

The energy landscape is rapidly evolving, requiring increasingly complex and reliable power distribution systems. The growing integration of renewable energy sources and converter interfaces introduces new challenges for transmission and distribution operators. Silicon carbide (SiC) power semiconductors have matured significantly and offer superior electrical performance, making them highly attractive for power electronics applications. However, challenges related to the gate stack reliability of SiC MOSFETs must still be addressed to enable their widespread adoption. The Semiconductors Packaging and Reliability Engineering research team seeks an intern to support the development of an innovative test setup for reliability investigations. The setup targets threshold voltage stability of SiC MOSFETs under extensive cycling and accelerated aging conditions. The successful candidate will develop and monitor a real-time system for tracking device aging. Experiments are conducted on a double pulse tester with a half-bridge evaluation board rated at 3.3 kV and 150 A. The internship duration is six months.

 

How you'll make an impact

  • Conduct measurement campaigns and data analysis based on the latest models available in literature

  • Propose innovative solutions for gathering more insights from the experimental tests: creating sensors array prototypes and automated data collection software

  • Optimize a half-bridge converter for long-term dynamic testing of SiC MOSFETs

  • Upgrade test electronics and data acquisition software needed to run high-precision measurements for extended test time

  • Document and communicate the solutions developed, to disseminate the gained knowledge within the research team, academic collaborators and the business unit of pertinence

Your background

  • Currently pursuing a Masters degree in electronics engineering, materials engineering, physics or a related discipline (official enrolment is essential)

  • Familiar with electrical measurements setup and with the design and construction of electronics systems. Previous experience with semiconductor physics and/or power devices is a strong plus

  • Experience with LabView programming, and knowledge of programming languages (e.g. Python, C, Matlab)

  • Fluency in written and spoken English

  • Good communication and technical writing skills

  • Creative and able to work autonomously

More about us

We are a technology-driven company with a strong focus on innovation, continuous improvement, and sustainable manufacturing. We offer flexible working conditions, dedicated mentorship, and a supportive, inclusive environment where you can grow personally and professionally – empowering you to thrive while balancing life and work.

Lieu Baden-Daettwil, Aargau, Switzerland
Type d'emploi Full time
Work Arrangement On-Site
De l'expérience Internship
Fonction du poste Intern
Contrat Intern (Fixed Term) (Trainee)
Date de publication 2026-08-03
Numéro de réference R0139255

À propos de Hitachi Energy

Hitachi Energy est un chef de file mondial de l’électrification, propulsant l’ère de l’électricité pour répondre aux besoins énergétiques d’aujourd’hui et des 25 prochaines années. En tant que branche énergétique du groupe Hitachi, plus de trois milliards de personnes dépendent de nos technologies novatrices et essentielles pour alimenter leur vie quotidienne.

Avec plus d’un siècle d’innovation, nous relevons le défi énergétique le plus urgent de notre époque : stimuler l’évolution du système énergétique mondial afin d’assurer une énergie abondante, sûre, abordable et durable pour la génération d’aujourd’hui et celle à venir.

Disposant d’une base installée inégalée dans plus de 140 pays, nous sommes le partenaire de l’écosystème du réseau dans les secteurs des services publics, de l’industrie, des centres de données et du transport. Avec notre siège social en Suisse, nous employons plus de 56 000 personnes dans 60 pays et générons des revenus d’environ 20 milliards de dollars américains.