Virtual Conference ISPSD 2020

Hitachi Energy Semiconductors was again part of ISPSD, but for the first time this event was held virtually. We contributed two oral presentations and six posters covering high-voltage Si and SiC devices, and were pleased by the positive feedback we received. In total, ISPSD 2020 featured 44 oral presentations, 94 poster presentations and close to 600 registered participants from all over the world. The parallel sessions of the live event meant that it was impossible to attend all of them, so the recorded presentations will be available on the conference website until October 30^th, 2020.

Hitachi Energy, Semiconductors, was delighted to be awarded the ISPSD 2020 Best Poster Award for our paper titled "Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability", by Stephan Wirths, Yulieth Arango, Andrei Mihaila, Marco Bellini, Gianpaolo Romano, Giovanni Alfieri, Manuel Belanche, Lars Knoll, from Hitachi Energy, and Enea Bianda, Elena Mengotti, from ABB Switzerland Ltd. We are proud that our power semiconductor technology is at the forefront of HV-SiC solutions.

Since the first meeting that was held in Tokyo in 1988, this event has become widely regarded as the IEEE’s most important technical forum for showcasing developments in power semiconductor devices and power integrated circuits. This year it was a virtual place where participants from all over the world could meet to exchange information and opinions on the future of power semiconductors, bringing together the world’s foremost experts and leading companies in the field.