Insulated Gate Bipolar Transistor (IGBT) and diode modules with SPT, SPT+, SPT++ and TSPT+ chips
Hitachi Energy's IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules. The high-power HiPak IGBT modules feature low losses combined with soft-switching performance and record-breaking Safe Operating Area (SOA). The newly introduced 62Pak and LoPak fast switching medium-power IGBT modules feature lowest switching losses, full 175 °C operation with full square SOA and standard package allowing drop-in replacement.
For downloading and printing of data sheets in PDF format, click on the part numbers.
- 1200 V
- 1700 V
- 3300 V
- 4500 V
- 6500 V
|5SNG 0600R120500||1200||2 x 600||Phase leg IGBT||LoPak||XML||Request|
|5SNG 0600R120590||1200||2 x 600||Phase leg IGBT||LoPak||XML||Request|
|5SNG 0900R120500 *||1200||2 x 900||Phase leg IGBT||LoPak||Request|
|5SNG 0900R120590 *||1200||2 x 900||Phase leg IGBT||LoPak
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