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Features Zurich, Switzerland 06-03-2024

2 min read

Hitachi Energy advances its semiconductor technology with first 300 mm wafer for IGBT

Innovative technological breakthrough will increase chip production capacity and deliver complex structures for 1200V insulated gate bipolar transistors (IGBT).

Hitachi Energy’s semiconductors with its first 300 mm wafer for IGBT power semiconductor devices.

From left: Makan Chen, Vice President of Sales & Business Development; Dr. Rainer Kaesmaier, Managing Director of Semiconductors; Tobias Keller, Vice President of Global Product Management & Marketing; Luca De Michielis, R&D Team Manager for BiMOS Chips, Roc Blumenthal, Global Program Manager of Low Voltage IGBT

Hitachi Energy has achieved a breakthrough in its power semiconductor technology by introducing the 300 mm wafer. The innovative development boosts chip production capacity and enables more complex structures in 1200V insulated gate bipolar transistors (IGBT), a power semiconductor device rapidly switching power supplies in high-power applications. Applications for IGBT include variable frequency drives (VFD), uninterruptible power supply (UPS) systems, electric cars, trains and air conditioners, among others.

The larger wafer offers numerous benefits, including the potential to yield over double (2.4 times) the number of functioning integrated circuits per wafer as compared to the existing 200 mm wafer, leading to significant cost savings. It utilizes the latest fine pattern trench IGBT design, resulting in energy-efficient power conversion and control and minimizing power losses during operations.

Developing a 300 mm wafer is crucial in accelerating the energy transition, enabling more efficient use of resources in renewable energy and industrial drives. “It is impressive to see how seamless and fast the introduction of the 300mm wafers has been. The team’s success not only advances Hitachi Energy’s semiconductor technology but offers our customers enhanced competitiveness and capacity. In the future, we plan to expand our 300 mm wafer platform to support higher voltage IGBTs,” said Dr. Rainer Kaesmaier, Managing Director of Hitachi Energy’s semiconductors business.

Semiconductor experts at Hitachi Energy achieved this milestone through close collaboration with a cross-functional team, including Product Management, Business Development, Research & Development, and a chip foundry partner. 

Hitachi Energy is paving the way for a more efficient and sustainable future by continuously pushing boundaries and seeking new solutions. The new 300 mm IGBT is a testament to the company’s commitment to drive social innovation in the evolving energy sector.