It is our pleasure to invite you to the PCIM Europe 2026 exhibition and conference, which will take place in Nuremberg, Germany, from 9-11 June. Visit us at our booth 302, hall 9.
Get to know Hitachi Energy Semiconductors latest products, innovations, and highlights. Here is a brief overview of what we will focus on this year:
- HiPak IGBT Module (5SNA 2100E330400) Next Generation Trench Soft Punch Through (TSPT+) IGBT with Field Charge Extraction (FCE) Diodes in standard HiPak package.
- HiPak IGBT module (5SLD 1500J450300): High current diode HiPak 4.5kV necessary for NPC or Chopper function in Medium Voltage Drives or Traction Converters.
- LinPak (5SNG 1250X170500): Next Generation 1.7kV with Trench Fine Patter (TFP) technology in LV LinPak housing.
- Full SiC LinPak, module demonstrators (5SFG 1800X230100): High current density 1.7kV SiC LinPak.
- HV LinPak, dual IGBT module (5SNG 0600Z330400): Next Generation 3.3kV Trench Enhanced Soft Punch Through (TPT+) IGBTs and Field Charge Extraction (FCE) diodes in HV LinPak module.
- LoPak dual IGBT module (5SNG 0750R170500): Next Generation of 1.7 kV chips set Trench Fine Pattern (TFP) in the standard industrial housing. Optional with TIM.
- StakPak – IGBT / BiGT press pack modules (5SMA6250L450300): Most powerful IGBT switch in a StakPak module.
Thyristor:
- Phase Control Thyristor in Explosion protected Housing (6500 V / 3800 A): New 6.5 kV rated next generation industrial device offers 30% more performance compared to our actual platform. The device is available in special explosion protected housing or as standard variant.
- Large size Phase Control Thyristor (8500 V / 4500 A): Large size high voltage thyristor offering lowest losses and highest performance for most demanding applications such as HVDC Classic, industrial applications, and renewable energy.
- Phase Control Thyristor (1800 V / 1800 A): Small size high power thyristor. The ideal choice for transfer switch application in data center.
IGCT:
- Asymmetric IGCT (4500 V / 6500 A): The ideal choice for demanding offshore wind and industrial drives applications. Compared to previous generation 30% more performance.
- Asymmetric IGCT (6500 V/ 6000A), Integrated gate-commutated thyristors: High voltage IGCT ideal choice for next generation HVDC and industrial applications.
Diodes:
- Large size Fast Recovery Diode (FRD) (4500 V / 4400 A): New 4.5 kV rated large size FRD to be used as companion diode in most powerful IGBT or IGCT converters.
- Fast Recovery Diode (4500 V / 2700 A): New 4.5 kV rated FRD offers lowest losses, highest turn-off (SOA) and surge current capability and optimal reverse recovery softness behaviour.
- Housingless Welding diode (HLWD) (400 V / 13500 A): Our leading HLWD platform sets standards in resistance welding for Automotive industry.
60Pak BiPolar Module:
- 60Pak - Diode module (6500 V / 500 A): The new 6.5 kV rated 60 mm industry standard module ideal for demanding medium voltage application.
- RoadPakTM with roadmount cooler
- SiC RoadPakTM automotive module up to 1200V, 780A, 980A, 1150A
There will be several technical papers presented by Hitachi Energy experts in the PCIM conference and eMobility forum. Furthermore you can visit us at the vendor stage and the AI & Data Centers Stage. You will find all relevant information concerning our posters and presentations in our conference program.
Our team is looking forward to welcoming you at our booth 302, hall 9.
See you there!
Part numbers and data sheets
Tickets for the PCIM Europe
Product highlights
Contact Us
