It is our pleasure to invite you to the APEC 2026 exhibition and conference, which will take place at the Henry B. Gonzalez Convention Center in San Antonio, Texas, USA, from 22-26 March 2026. Visit us at our booth 201.
Get to know Hitachi Energy Ltd Semiconductors latest products, innovations, and highlights. Here is a brief overview of all the exciting products awaiting you:
- HiPak IGBT Module (5SNA 2100E330400) Next Generation Trench Soft Punch Through (TSPT+) IGBT with Field Charge Extraction (FCE) Diodes in standard HiPak package.
- HiPak IGBT module (5SLD 1500J450300): High current diode HiPak 4.5kV necessary for NPC or Chopper function in Medium Voltage Drives or Traction Converters.
- LinPak (5SNG 1250X170500): Next Generation 1.7kV with Trench Fine Patter (TFP) technology in LV LinPak housing.
- Full SiC LinPak, module demonstrators (5SFG 1800X230100): High current density 1.7kV SiC LinPak.
- HV LinPak, dual IGBT module (5SNG 0600Z330400): Next Generation 3.3kV Trench Enhanced Soft Punch Through (TPT+) IGBTs and Field Charge Extraction (FCE) diodes in HV LinPak module.
- LoPak dual IGBT module (5SNG 0750R170500): Next Generation of 1.7 kV chips set Trench Fine Pattern (TFP) in the standard industrial housing. Optional with TIM.
- StakPak – IGBT / BiGT press pack modules (5SMA6250L450300): Most powerful IGBT switch in a StakPak module.
Thyristor:
- Phase Control Thyristor in Explosion protected Housing (6500 V / 3800 A): New 6.5 kV rated next generation industrial device offers 30% more performance compared to our actual platform. The device is available in special explosion protected housing or as standard variant.
- Large size Phase Control Thyristor (8500 V / 4500 A): Large size high voltage thyristor offering lowest losses and highest performance for most demanding applications such as HVDC Classic, industrial applications, and renewable energy.
- Phase Control Thyristor (1800 V / 1800 A): Small size high power thyristor. The ideal choice for transfer switch application in data center.
IGCT:
- Asymmetric IGCT (4500 V / 6500 A): The ideal choice for demanding offshore wind and industrial drives applications. Compared to previous generation 30% more performance.
- Asymmetric IGCT (6500 V/ 6000A), Integrated gate-commutated thyristors: High voltage IGCT ideal choice for next generation HVDC and industrial applications.
Diodes:
- Large size Fast Recovery Diode (FRD) (4500 V / 4400 A): New 4.5 kV rated large size FRD to be used as companion diode in most powerful IGBT or IGCT converters.
- Fast Recovery Diode (4500 V / 2700 A): New 4.5 kV rated FRD offers lowest losses, highest turn-off (SOA) and surge current capability and optimal reverse recovery softness behaviour.
- Housingless Welding diode (HLWD) (400 V / 13500 A): Our leading HLWD platform sets standards in resistance welding for Automotive industry.
60Pak BiPolar Module:
- 60Pak - Diode module (6500 V / 500 A): The new 6.5 kV rated 60 mm industry standard module ideal for demanding medium voltage application.
- RoadPakTM with roadmount cooler
- SiC RoadPakTM automotive module up to 1200V, 780A, 980A, 1150A
Exibitor Presentation not to miss:
Our expert Tobias Keller will be holding a presention "Power Semiconductors - The silent Heroes of the power Grid".
Date & Time: Tuesday, March 24, 2026, 3:45pm-4:15pm
Location: 214A