Choose your region and language

Global
Argentina
Australia
Austria
Bahrain
Brazil
Bulgaria
Canada
Chile
China
Colombia
Czech Republik
Denmark
Egypt and North Africa
Finland
France
Germany
Greece
Hungary
India
Indonesia
Iraq
Ireland
Italy
Japan
Jordan
Kuwait
Malaysia
Mexico
New Zealand
Norway
Oman
Pakistan
Panama
Peru
Philippines
Poland
Portugal
Qatar
Saudi Arabia
Singapore
Slovakia
South Africa
South Korea
Spain
Sweden
Switzerland
Taiwan, China
Thailand
Türkiye
Ukraine
United Arab Emirates
United Kingdom
United States
Vietnam
English
Spanish
English
German
English
Portuguese
English
English
French
Spanish
Chinese
Spanish
English
English
English
English
French
German
English
English
English
English
English
English
Italian
Japanese
English
English
English
Spanish
English
English
English
English
Spanish
Spanish
English
Polish
English
English
English
English
English
English
English
Spanish
Swedish
German
French
Italian
English
English
English
English
English
English
English
English
Go

Menu

IGCT – Harnessing the power of wind

Features | 09.04.2021 | 2 min read

High power semiconductors are key components to control the power generation and connection of the net-work from renewable energy sources such as wind turbines. The semiconductors are used for two main tasks in the chain of renewable energy sources, one is the conversion of power in the plant, such as in wind turbines, and second is the transmission of power to the grid.

IGCTs (integrated gate-commutated thyristors)

Offshore wind generation will become a significant contributor in the global effort to decarbonize energy production. Higher-power wind turbines are an important trend in the wind industry, as they help to improve profitability. Today, the current generation of Hitachi Energy IGCTs (integrated gate-commutated thyristors) are part of the largest offshore wind converters, delivering more than 10 MW of power.

Medium voltage converters offer the clear advantages of smaller currents, low part counts, simpler installation, and reduced space and weight of the equipment. IGCT technology improves the efficiency and reliability of the wind converter significantly, enabling operators of medium voltage converters to reach the lowest Levelized Cost of Energy (LCOE) and highest return on capital.

Hitachi Energy has developed a new asymmetric 4.5kV IGCT platform to support the trend towards higher power output. The 6500 A, 4500 V IGCT is designed for wind converters delivering 15 MW and above. The segment layout was developed with the goal of maximizing the controllable current. Its mechanical design is based on an existing platform for outerring-gate, 94 mm-diameter silicon wafers, and is footprint compatible with existing IGCT platform.

There will be significant growth in renewables in the next few years, many governments are investing in renewable energy projects. We at Hitachi Energy register an increased demand for IGCTs in offshore wind applications. In 2021, we expect to sell 25% more of these devices in comparison to last year and a further increase is expected in 2022. 

IGCT

The IGCT is the semiconductor of choice for demanding high-power applications such as wind power converters, medium-voltage drives, pumped hydro, marine drives, co-generation, interties, and FACTS. Hitachi Energy semiconductors’ range of 4500 to 6500 volt asymmetric and reverse conducting IGCTs deliver highest power density and reliability together with low on-state losses.